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Our innovative client is now searching for a MOCVD Growth Engineer to be responsible for designing the stack and growing GaN epitaxy on silicon for end market applications.
The role will involve completing R&D activities and transferring to partner sites. Working closely with customers/process/equipment engineers will be required.
Required skills for the MOCVD Growth Engineer will include;
• Strong GaN-on-Si epitaxial growth knowledge
• Experience of working within a high volume manufacturing area
• Veeco / Aixtron experience desirable
• Excellent communications skills
• PhD/Masters/BSc Degree in Electrical Engineering/Physics or related discipline
Please contact Rachel Anderson for further details
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MOCVD Growth Engineer
IC Resources